Intern – Process Engineering, Chemical Vapour Deposition (CVD)

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Project Description:
Crater defects in the tetraethyl orthosilicate chemical vapour deposition process present potential yield and integration challenges in a high-volume manufacturing environment. This project will focus on developing an understanding of crater defect mechanisms through structured data review and analysis.

The intern will explore process behaviour, defect characteristics, and key parameters within the chemical vapour deposition process, building foundational knowledge in semiconductor manufacturing, data analysis, and process engineering.

Project Scope:

• Gain understanding of the tetraethyl orthosilicate chemical vapour deposition process flow and chamber conditions
• Analyse inline defect and yield datasets to study crater defect characteristics and trends
• Observe structured experiment setups (design of experiment or split runs) conducted under engineering guidance
• Evaluate relationships between defect behaviour and film performance metrics through data analysis
• Document findings and observations across different process conditions

Learning Opportunities:
The intern will gain exposure to semiconductor process engineering concepts, defect analysis methodologies, and target="_blank">hrsupport_sg@micron.com

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